About Us

Quantum Design has been active in Latin American since 1998. In 2010 the Latin America office was opened in Brazil to meet the needs of the sizable and growing research base using Quantum Design Equipment.

The office is fully operational where new features are continually being added to facilitate activities for researchers.

We are fortunate to be able to represent a very good line of other scientific instrumentation companies to service Latin America.

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• Light could boost performance of fuel cells, lithium batteries and other devices Engineers from MIT and Kyushu University in Japan have demonstrated for the first time that light can be used to significantly improve the performance of fuel cells, lithium batteries and other devices that are based on the movement of charged atoms, or ions. Read More
• In situ ion-exchange preparation methods developed for efficient electrocatalytic water oxidation Using a simple redox-precipitation approach, a research team has recently reported their synthesis of ultrathin NiCoFe-NDA (NDA=2,6-naphthalenedicarboxylic acid) nanosheets for high efficiency oxygen evolution reaction (OER) in anion exchange membrane electrolysis (AEMWE). Related results were published on Energy & Environmental Science. Read More
• A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures Two-dimensional semiconductors have a valley degree of freedom that could be used as a platform for future optoelectronic devices. The valley Hall effect, caused by electrons in different valleys having opposite Berry curvatures, is important for making such devices, but has only been reported with plasmonic structures or at cryogenic temperatures, limiting practical application. Here we report the observation of the valley Hall effect at room temperature in a molybdenum disulfide/tungsten diselenide van der Waals heterostructure. We show that the magnitude and polarity of the valley Hall effect in the heterostructure are gate tunable, which can be attributed to the contribution of the opposite valley Hall effect from electrons and holes in different layers. We use this gate tunability to create a bipolar valleytronic transistor. Read More

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